We demonstrate a technique to nanofabricate nitrogen vacancy (NV) centers indiamond based on broad-beam nitrogen implantation through apertures in electronbeam lithography resist. This method enables high-throughput nanofabrication ofsingle NV centers on sub-100 nm length scales. Secondary ion mass spectroscopy(SIMS) measurements facilitate depth profiling of the implanted nitrogen toprovide three-dimensional characterization of the NV center spatialdistribution. Measurements of NV center coherence with on-chip coplanarwaveguides suggest a pathway for incorporating this scalable nanofabricationtechnique in future quantum applications.
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